发明名称 MULTIJUNCTION SEMICONDUCTOR DEVICE
摘要 <p>Abstruct of the Disclosure A heat-resistant multijunction semiconductor device comprising a p-layer, a n-layer and a diffusionblocking layer, the diffusion-blocking layer being provided between the p-layer and the n-layer. The semiconductor device can reduce the fall-clown of quality which is caused by the diffusion of dopant atoms in the player and n-layer, respectively, into the other layer.</p>
申请公布号 CA1252229(A) 申请公布日期 1989.04.04
申请号 CA19850491769 申请日期 1985.09.27
申请人 KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA 发明人 TAKADA, JUN;YAMAGUCHI, MINORI;TAWADA, YOSHIHISA
分类号 H01L31/04;H01L25/07;H01L29/868;H01L31/075;H01L31/20;(IPC1-7):H01L29/06 主分类号 H01L31/04
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