| 摘要 |
<p>The image sensor is built up as a matrix of rows and columns of photosensitive cells (3.2) on a mono-crystalline silicon substrate (3.1). The sensor has a reflective aluminium layer and has a max. thickness of 25 to 30 microns. The flat cells are at the bottoms of pits formed by prismatic shaped walls (3.4) between the cells. The sloping sides of the pits are formed by repetitive masking and etching operations, after which the photosensitive elements are produced by conventional integrated circuit mfg. processes. The walls reflect incident beams into the cells, unless they come in at an unacceptable angle.</p> |
