| 摘要 |
PURPOSE:To perform a high integration by forming a groove on a field region, employing it as a capacitor, and connecting the source region of a transistor to the charge storage region of a capacitor. CONSTITUTION:An N-type impurity layer 10 and a field oxide film 2 are sequentially formed on a P-type semiconductor substrate 1. The film 2 is penetrated through a field region, and a groove 3 of the state that the substrate 1 is dug is formed. An N-type impurity layer 4 is formed only on the inner wall of the groove 3, and a first gate oxide film 5 is then formed. Then, after a polysilicon 6 is patterned, a second gate oxide film 7 is formed, and a polysilicon 8 is patterned. N-type impurity layers 9a, 9b are formed by ion implanting. An insulating film 12 is formed, a hole is opened on the layer 9a, a polysilicide (wiring layer) 11 is formed, connected to the layer 9b and wired. |
