| 摘要 |
PURPOSE:To stabilize characteristics by adjusting the amount of an oxygen content in a superconducting thin-film, and then by annealing it for a short period of time using a cover layer that oxygen cannot penetrate. CONSTITUTION:Superconducting materials, for example, Y, Ba, Cu, or O, that constitute Y1Ba2Cu3O7-delta (delta<0.5) are deposited on a substrate 11 such as Al2O3 single crystal (sapphire), MgO single crystal, and SrTiO3 single crystal so that the ratio of amounts of metal elements becomes the ratio in the above chemical equation. The substrate 11 with a substrate 12 is held at 200-800 deg.C in an atmosphere of oxygen. Oxygen supplied from the atmosphere is dissolved in the deposited layer 12, and the amount of oxygen is raised to the final required amount of oxygen in a superconducting thin-film. Then, the part that requires superconducting characteristics in this deposited layer 12 is covered with a layer that oxygen cannot penetrate. For a layer that oxygen cannot penetrate at an annealing temperature (about 900 deg.C), silicon nitride 13 is used. When the annealing time is short, SiO2, AlN, PSG, Pt, Au, Pd, Al, Si, etc., can be used. |
