发明名称 MAGNETORESISTANCE ELEMENT
摘要 PURPOSE:To obtain MR element having a self-bias magnetism or an easily magnetizable axis, by conbination of a material to be deposited as MR element, an angle of incidence of particles to be deposited onto the substrate, and a direction of MR element pattern to the direction of the incidence. CONSTITUTION:MR material film for MR element is formed by obliquely holding a substrate 1 in depositing a film at an angle 4=10-60 deg. from the direction of incidence of the deposition particles (the direction of deposition), then a metal film can be obtained having a self-magnetism in the direction of deposition or in its orthogonal direction. The direction of the resistor pattern 4 is formed at angle beta of 30 deg.-60 deg. to a projection line 3, on the substrate, of a line indicating an incidence direction of deposition particles. In the MR element, when the self-magnetism is reversed by impressed magnetic field in the spin of the magnetic field as in the Wiegand wire, the synthetic magnetic field applied to the MR element changes suddenly, thereby the MR element generates a specific change of the resistance.
申请公布号 JPS6486579(A) 申请公布日期 1989.03.31
申请号 JP19870132679 申请日期 1987.05.27
申请人 AICHI TOKEI DENKI CO LTD 发明人 SHIKITA YUKIHISA
分类号 H01L43/08 主分类号 H01L43/08
代理机构 代理人
主权项
地址