| 摘要 |
PURPOSE:To produce the title sintered body having excellent strength by sintering a system consisting of the whiskers of SiC or Si3N4 and Si powder at a temp. lower than the m.p. of Si in a specified pressurized N2 atmosphere to obtain a sintered body, and depositing an inorg. compd. in the sintered body by a chemical vapor-phase method. CONSTITUTION:The whiskers consisting essentially of at least one kind between SiC and Si3N4 and Si powder are mixed, the mixture is compacted, and the compact is sintered at a temp. lower than the m.p. of Si and at 1.5-10atm. N2 partial pressure. Consequently, the whiskers are bound by the Si3N4 formed by the reaction of Si with N2, and a sintered body is obtained. Furthermore, an inorg. compd. is deposited on the inside or on the surface of the sintered body by a chemical vapor-phase method. By this method, the formation of an Si melt at the time of nitriding Si is prevented, the reaction of the whiskers with Si is inhibited, and the deterioration of the whisker and the generation of voids due to the reaction can be controlled. The sintered body is highly densified because of the deposition of the inorg. compd., and a sintered body having excellent bending strength and toughness can be obtained. |
