| 摘要 |
PURPOSE:To increase light emitting intensity by forming an light emitting layer portion, having a band gap smaller than that of a non-light emitting layer portion adjacent to each conductive layer, at that portion of an intrinsie semiconductor layer remote from first and second conductive layers that pinch the semiconductor layer. CONSTITUTION:An light emitting element L consists of a transparent conductive layer 2 formed on a glass substrate 1, a p-type a-SiC layer 3 and an Ag electrode 6a formed on the conductive layer 2, a light emitting i-type a-SiC layer 4, n-type a-SiC layer 5 and an Ag electrode 6b formed on the layer 3 in succession. The i-type a-SiC layer 4 includes a light emitting portion 4c formed between two adjacent non-light emitting layer portions 4a and 4b and provided with a band gap smaller than those of the other layer portions. Because the light emitting layer portion 4c has smaller band gap than the other layer portions 4a and 4b and is located close to the p-type a-SiC layer 3, light emitting intensity can be improved. |
