| 摘要 |
PURPOSE:To improve temperature characteristics with the features of law threshold and short wave, by forming an active layer in a multiple-superlattice quantum well structure wherein a superlattice barrier layer and a superlattice well layer are alternately laminated. CONSTITUTION:A superlattice barrier layer 21 and superlattice well layer 22 are both constructed in a manner that 2 kinds of thin layers of different compositions wherein one layer is at most a pentamolecular layer i.e. GaAs layer and AlGaAs layer are alternately laminated. A multiple quantum well structure has features of a comparatively long oscillation wavelength, and a good temperature characteristics. A superlattice structure is applied to a multiple quantum well structure having a good temperature characteristic to construct an active layer 5 by the multiple superlattice quantum well structure wherein a superlattice quantum well layer and a superlattice barrier layer are alternately laminated. Since crystal growth is done while keeping an excellent interfacial evenness, the temperative characteristic can be improved without damaging low threshold leveling and short wave property. |
