| 摘要 |
PURPOSE:To obtain a superconducting device operating at temp. higher than a liquid nitrogen temp. and having uniform characteristics, by a method wherein the c-axis of an oxide superconductor crystal constituting a superconducting device is oriented about perpendicular to the direction of a superconducting current flow direction in the oxide conductor. CONSTITUTION:A substrate 1 consists of a SuTiO3 single crystal with its main surface perpendicular to a crystal's c-axis. On the main surface of the substrate 1 a normal conductor or superconductor 2 is formed, which serves as a single crystal thin film with its c-axis oriented in the direction of the c-axis of the substrate. Next, a superconductor 3 is similarly formed by sputtering while being oriented in the c-axis direction of the substrate 1 and the semiconductor 2. Sputter-etching is performed on the surface of the superconductor 3 to process it into two opposing superconducting electrodes 3a, 3b. Thus, a superconductor device having a structure, superconductor 3a-normal conductor (semiconductor) 2-superconductor 3b, can be produced, providing uniform characteristics, good repeatability and stable circuit operation. |
