METHOD OF SIMULTANEOUSLY PRODUCING BIPOLAR AND COMPLEMENTARY MOS TRANSISTORS AS A COMMON SILICON SUBSTRATE,申请号EP19860106486-传众专利搜索

发明名称	METHOD OF SIMULTANEOUSLY PRODUCING BIPOLAR AND COMPLEMENTARY MOS TRANSISTORS AS A COMMON SILICON SUBSTRATE
摘要
申请公布号	EP0204979(B1)	申请公布日期	1989.03.29
申请号	EP19860106486	申请日期	1986.05.13
申请人	SIEMENS AKTIENGESELLSCHAFT BERLIN UND MUNCHEN	发明人	JACOBS, ERWIN P., DR.;WINNERL, JOSEF, DR.
分类号	H01L21/331;H01L27/092;H01L21/762;H01L21/8234;H01L21/8238;H01L21/8249;H01L27/06;H01L27/088;H01L29/73;(IPC1-7):H01L21/82	主分类号	H01L21/331
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