| 摘要 |
PURPOSE:To form the SNR resist pattern which does not remain the residue of a resist in all region after developing, and has the good definition by using a mixed solvent of isoamyl acetate and ethyl cellosolve in the development of said resist. CONSTITUTION:When an electromagnetic wave having a prescribed wavelength or a corpuscular beam having a prescribed energy is selectively injected on a negative type resist SHR cotg. silicon, and then, the obtd. SNR resist is to be developed, said resist is developed with a developing solvent composed of the mixed solvent of isoamyl acetate (IAA) and ethyl cellosolve (EC). Accordingly, as the deterioration of pattern contrast due to trailing the bottom in the low sensitive region of the sensitive curve is improved, the problem about the resist residue after developing can be solved. Thus, the SNR resist pattern having the good definition can be obtd. with the high accuracy. |
