| 摘要 |
<p>A field-effect transistor has two planar-doped layers (7,8), each having two-dimensionally doped impurities. The layers (7,8) extend in the channel region (5) between the source (3) and the drain (4), and are separated by a distance substantially equal to or less than the mean free path of electrons. The invention provides a field-effect transistor with high-frequency and high-speed operating characteristics.</p> |
