发明名称 |
A component for producing semi-conductor devices and process of producing it. |
摘要 |
<p>A component for producing semiconductor devices such as a tube, a boat or the like, comprising a component body made of a silicon carbide material, a silica layer formed on a surface of the body and a CVD coating layer of silicon carbide formed on the silica layer. The silica layer has a thickness ranging between 0.1 and 5 microns. The CVD coating layer has a thickness ranging between 50 to 1000 microns.</p> |
申请公布号 |
EP0308695(A2) |
申请公布日期 |
1989.03.29 |
申请号 |
EP19880114166 |
申请日期 |
1988.08.31 |
申请人 |
TOSHIBA CERAMICS CO., LTD. |
发明人 |
OHTO, TAKASHI C/O OGUNI PLANT OF TOSHIBA CERAMICS;TANAKA, TAKASHI C/O OGUNI PLANT TOSHIBA CERAMICS;SATOH, MAKOTO C/O OGUNI PLANT OF TOSHIBA CERAMICS |
分类号 |
C04B41/89;C04B41/52;C23C16/44;C30B31/14;C30B35/00;H01L21/205;H01L21/22 |
主分类号 |
C04B41/89 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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