发明名称 |
Process of producing single crystalline LnA2Cu3O7-x thin films having three-layered perovskite structure. |
摘要 |
A thin film consisting of a single crystalline oxide of the formula: LnA2Cu3O7-x (I) wherein Ln is at least one of the rare earth elements Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm and Yb and A is at least one of the alkaline earth metals Ba, Sr and Ca which has a three-layered perovskite structure in which (1)the(001) plane, (2)the (110) plane or (3)the(103) plane of the crystal is parallel with the film surface is provided. |
申请公布号 |
EP0308869(A2) |
申请公布日期 |
1989.03.29 |
申请号 |
EP19880115399 |
申请日期 |
1988.09.20 |
申请人 |
KANEGAFUCHI CHEMICAL INDUSTRY CO., LTD.;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;NEC CORPORATION;NIPPON MINING COMPANY LIMITED;NIPPON STEEL CORPORATION;TDK CORPORATION;TOSOH CORPORATION;TOYO BOSEKI KABUSHIKI KAISHA;SEISAN KAIHATSU KAGAKU KENKYUSHO;UBE INDUSTRIES, LTD. |
发明人 |
TAKADA, TOSHIO;TERASHIMA, TAKAHITO;BANDO, YOSHICHIKA |
分类号 |
C30B25/02;H01L39/24 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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