| 摘要 |
PURPOSE:To form a single crystal or high orientation thin film whose Tc is high, by using, as a substrate for depositing an M1Ba2Cu3O7-x oxide superconductor thin film, perovskite type oxide, in particular, a single crystal substrate whose lattice constant coincides with the length of (b) axis of the above oxide crystal. CONSTITUTION:On a substrate composed of perovskite type oxide having lattice constant of 3.76-3.87Angstrom , an oxide thin film is formed, whose composition formula is MXBaYCu3OZ, where 0.5<X<1.5, 1<Y<3.6, 6<=Z<=8 and M is Y, Nd, Sm Eu, Cd, Td, Dy, Ho, Er, Tm, Yb. By heat-treating this formed thin film, a thin film of a high Tc oxygen defficient tripple perovskite structure of (c) axis oriented polycrystal or single crystal is easily manufactured. Therefore a thin film having high critical current density in all direction of the substrate inner surface can be obtained, and the two-dimensional formation of circuit of superconducting elements and superconducting wiring is enabled in the substrate surface without restriction of direction. |
