| 发明名称 |
Method for forming a planarized thin film |
| 摘要 |
Charged particles are irradiated over a thin film formed on a convex and concave surface of a substrate or over a thin film being formed on a convex and concave surface of a substrate. During the irradiation, raise in temperature of the thin film and impingement of charged particles cause the fluidization of the thin film, so that a planarized thin film is formed within a short period of time.
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| 申请公布号 |
US4816126(A) |
申请公布日期 |
1989.03.28 |
| 申请号 |
US19870075208 |
申请日期 |
1987.07.20 |
| 申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
KAMOSHIDA, KAZUYOSHI;NAKAMURA, HIROAKI;AMAZAWA, TAKAO |
| 分类号 |
H01L21/363;H01L21/263;H01L21/321;H01L21/768;(IPC1-7):C23C14/34 |
主分类号 |
H01L21/363 |
| 代理机构 |
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