发明名称 FORMATION OF HETERO INTERFACE
摘要 PURPOSE:To prevent adhesion of impurities during a waiting phase and to prevent deterioration in light-emitting efficiency, by applying molecular beams to form a first epitaxial layer and then applying electronic beams to flatten the surface in the waiting phase. CONSTITUTION:At least one type of first molecular beams are applied to a substrate held at a predetermined temperature so that first molecules or atoms are deposited thereon to form a first epitaxial layer. In the waiting phase, application of the first molecular beams is stopped temporarily and electronic beams are applied to the first epitaxial layer. Application of the electronic beams is stopped and the first molecular beams are applied again so that the first molecules or atoms are deposited in one to several molecular or atomic layers to form a second epitaxial layer. At least one kind of second molecular beams are applied to the second epitaxial layer so that second molecules or atoms are deposited to form a third epitaxial layer. By applying the electronic beams to the substrate surface in the waiting phase at the homojunction interface, the surface diffusing rate of the atoms can be increased to decrease incorporation of impurities at the homo interface.
申请公布号 JPS6482612(A) 申请公布日期 1989.03.28
申请号 JP19870242122 申请日期 1987.09.25
申请人 NEC CORP 发明人 ANAMI TAKAYOSHI
分类号 C30B23/08;H01L21/203;H01L21/338;H01L29/778;H01L29/80;H01L29/812;H01L33/06;H01L33/30;H01S5/00 主分类号 C30B23/08
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