发明名称 Composite photosensitive material
摘要 A composite photosensitive material of enhanced sensitivity to, and absorption of, incident radiation, wherein an array of particles of an electrically conducting material is embedded in and dispersed through a semiconducting matrix transparent to the wavelengths of interest, the particles having sizes of from about 1 to about 100 nanometers and having volume fractions of at least about 10 percent. The composite material is usable in photosensitive device applications such as detectors, photocells, photodiodes, and vidicons. Sensitivity to infrared radiation is particularly high where the matrix has a dielectric constant of at least about 10. The preferred particle material for enhanced infrared sensitivity is silver or gold, and the preferred matrix is silicon of CuInSe2.
申请公布号 US4816183(A) 申请公布日期 1989.03.28
申请号 US19860898918 申请日期 1986.08.21
申请人 THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY 发明人 BATES, JR., CLAYTON W.
分类号 H01J1/78;H01J29/45;H01L31/0216;(IPC1-7):H01B1/06;H01C13/00 主分类号 H01J1/78
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