| 摘要 |
PURPOSE:To substantially decrease leakage current of a metal oxide having high permittivity to be used as a dielectric and to obtain a capacitor suitable for a VLSI chip or the Iike, by doping the metal oxide film with an element having polling electronegativity higher than a particular value. CONSTITUTION:Fluorine ions having poling electronegativity of 2 or more are implanted into an Ta2O5 film 6 having high pemittivity used as a dielectric. The film is then thermally treated within atmosphere of O2 so that lattice defect is annealed and chemical coupling of the implanted atoms is accelerated. Subsequently, an Al film is formed on the Ta2O5 film 6 to provide an upper electrode 7 which constitutes a capacitor 8 together with a lower electrode 4 and the dielectric Ta2O5 film 6 having high permittivity. In this manner, it is possible to obtain a capacitor suitable for mounting on a VLSI chip or the like, having a small area, large capacity and low current leakage properties. |
