| 摘要 |
PURPOSE:To contrive to change fine elements into high density and integration ones without contamination by a method wherein elements are isolated by one time photoetching, and an insulation film is buried flat into a field region by low temperature treatment. CONSTITUTION:After reactive ion etching is performed by applying a resist mask 13 on a thermal oxide film 12 of a P type Si substrate 11, resulting in the formation of a recess, an inversion prevention layer 14 is formed by ion implantation. A SiO2 15 is superposed by plasma CVD method and treated with buffer fluoric solution, and accordingly a V-groove 16 is formed in the periphery of the recess by the difference of etching speeds. A resist film 17 is coated, the surface flatted approximately is etched by reactive ion, etched at the same speed by selecting the conditions of heat-treating and etching the resist 17, and then the resist 17 is removed by exposing the projection film 15. When a CVD SiO2 18 is uniformly deposited, a resist 19 is superposed, and the substrate is exposed by likewise etching the flatted surface by reactive ion, the SiO2 15 and 16 is buried flat in the field part. In this constitution, contamination does not occur because of no use of Al or resist mask for forming the film 15, and accordingly the element characterististic is stabilized. |
