| 摘要 |
PURPOSE:To simplify a production process and to reduce a contact resistance value by a method wherein a light-extracting window is installed after removing one part of a semiconductor substrate, a diffusion region where an impurity of a second conductivity type has been diffused is installed and an ohmic electrode is formed on the semiconductor substrate having the light-extracting window. CONSTITUTION:This device is constituted by the following: an N-type GaAs substrate 1, an N-type GaAs buffer layer 2, a P-type GaAlAs clad layer 3, a P-type GaAs active layer 4, an N-type GaAlAs clad layer 5, an N-type GaAs contact layer 6, an N-type ohmic electrode 7, a P-type ohmic electrode 8, a P-type impurity diffusion region 9 and a light-extracting window 10. The substrate 1 is structured to constrict an electric current, and the region 9 acts as a path of the electric current; accordingly, a light-emitting region 11 is automatically aligned with the window 10. Accordingly, it is not required to make the electrode 7 and the electrode 8 small; a contact resistance value can be reduced; the region 11 and the window 10 can be constituted by automatically aligning them with each other; as a result, it is made possible to obtain a light- emitting diode without a complicated production process. |
