| 摘要 |
PURPOSE:To largely reduce a damage of a thin film transistor (TFT) in a step of hydrogenating, and to manufacture a high performance scanning circuit with good reproducibility by composing a polycrystalline silicon layer so as to insularly isolate it. CONSTITUTION:This TFT has a structure in which a polysilicon layer 102 formed on an insulating substrate 101 is insularly isolated, and the manufacture has the steps of so pattern-forming the layer 102 as to isolate the TFTs, forming a gate insulating film 103, a gate electrode 104, source, drain regions 105 and an interlayer insulating film 106, hydrogenating the layer 102 by a method, such as hydrogen plasma processing, hydrogen ion implanting, etc., and opening a contact hole 107 at the film 106 and forming a wiring pattern 108. The silicon layers are isolated at each TFT to eliminate a damage in the step of hydrogenating by hydrogen plasma processing, hydrogen ion implanting, etc., and a high performance TFT scanning circuit is manufactured with good reproducibility. |
