| 摘要 |
<p>PURPOSE:To prevent the opening phenomenon of an internal electronic circuit from occurring by interposing a diffused layer between a polycrystalline silicon fuse film and aluminum wirings to the electronic circuit, and mechanically dividing the aluminum wirings in a polycrystalline silicon fuse memory into two sections. CONSTITUTION:A field oxide film 2 formed on a P-type silicon substrate 1, two n<+> type diffused layers 9 isolated from one another on the substrate 1 and insularly disposed oppositely to be surrounded at its periphery with a field oxide film 2, a polycrystalline silicon fuse film 3 including a fuse 3a formed on the film 2 of the isolating region of the two layers 9, aluminum connecting wirings 5a extended from both ends of the film 2 and aluminum wirings 9 to an internal electronic circuit are connected by contact holes 5, 11 through the layers 9. The layers 9 are operated as wiring layers to effectively prevent the corrosion disconnection of aluminum connecting wirings 6a generated when the film 3 is disconnected between the wirings 6a and 6 from affecting to the wirings 6.</p> |
