| 摘要 |
PURPOSE:To accurately measure the thickness of an intermediate mixed layer, by reducing the dripping amount of an upper layer material when said material is applied to form a non-coating part. CONSTITUTION:A lower layer resist 2 is applied to a wafer 1 and an upper layer resist material 4 for measuring the intermediate mixed layer 3 with the lower layer resist 2 is applied to said resist 2 to form an upper layer non-coating part 5 on the wafer 1. In this case, when the dripping amount of the upper layer resist material 4 is reduced when said material applied as shown by a drawing (a), the non-coating part 5 is formed to the end of the wafer 1 as shown by a drawing (b). Next, when the upper layer material 4 (thickness, 0.5-1.0mum) is entirely removed, the difference in level of the intermediate mixed layer 3 (thickness; 0.1-0.2mum) is formed on the lower layer resist 2 (thickness; 1.0-1.5mum) as shown by a drawing (c) and, by measuring said difference in level, the thickness of the intermediate mixed layer 3 is measured. Therefore, since the non-coating part is formed by reducing the dripping amount of the upper layer material at the coating time thereof and the difference in level of the intermediate mixed layer formed on the lower layer resist can be utilized after the removal of the whole of the upper layer material, the thickness of said intermediate mixed layer can be accurately measured. |
