| 摘要 |
<p>PURPOSE:To permit the improvement of the accuracy of the surface of cleavage, by a method wherein a surface, on which a forward mesa is generated along the objective direction of cleavage of a crystalline wafer, is determined as a reference surface while the wafer is bent to form an angle shape along the objective direction of cleavage of the reference surface to split it. CONSTITUTION:The direction of forward mesa is determined as the direction of cleav age on a surface while a crystalline wafer is bent convexly along the direction of cleavage to split it. When the cleavage of the wafer, having 100, -100 plane on the surface thereof, is effected in parallel to a direction 0-1-1, the plane 100 is bent convex ly, while the cleavage is effected in parallel to a direction 01-1, a plane -100 is bent convexly. When the cleavage of the wafer, having a plane 010, 0-10, is effected in parallel to a direction-10-1, the plane 101 is bent convexly but the same is effected in parallel to a direction -101, a plane 0-10 is bent convexly. When the cleavage of the wafer having a plane 001, 00-1 is effected in parallel to a direction-1-10, a plane 001 is bent convexly but the same is effected in parallel to a plane -110, a plane 00-1 is bent convexly. According to this method, a curvature due to cleavage may be eliminated and the accuracy of the surface of cleavage may be improved whereby the yield of a rear process may be improved.</p> |
