| 摘要 |
PURPOSE:To decrease activating energy without decreasing light transmittance accompanied by TCO reduction as in hydrogen dilution, when a window layer of one conductivity type semiconductor is formed on the electrode on the light receiving surface of a light transmitting conductor oxide (TCO), by diluting the mixed gas of silicon compound gas and oneconductivity type determined impurity gas by rare gas in high degree, and using the mixed gas. CONSTITUTION:Semiconductor films 3, whose main body is a-Si, are deposited and formed on a glass substrate 1 in contact with an electrode 2 on a light receiving surface comprising TCO. A p-type window layer 3p is formed in contact with the electrode 2 on the light receiving surface. Thereafter, i-type optical active layer 3i and an n-type ohmic impurity layer 3n are sequentially deposited. The window layer 3p is formed as follows: mixed gas comprising silicon compound of silane, disilane and the like and diborane is diluted with rare gas such as helium and argon by about 50-500 times; and gas decomposition is performed. The optical active layer 3i is formed by using 100% silicon compound gas as a raw material. The film, which is excellent for optoelectronic transducing action, is obtained without decreasing the film forming speed. Finally, a rear surface electrode 4 having a laminated structure is deposited. |
