发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To simplify the constitution of a circuit to generate a 1/2VPP voltage by setting a first and a second capacitors and the gate capacity of a MOS transistor suitably. CONSTITUTION:The first and the second capacitor 9, 10 are connected in series between the output of a charge pump 1 circuit and the ground, and the MOS transistor 11 whose drain is connected to the output of the charge pump 1 circuit and its gate is connected to the contacting point between the capacitors 9, 10 in provided. By suitably setting the capacitance of the capacitors 9, 10 and the gate capacitance of the transistor 11, a specific intermediate voltage can be outputted from the source of the transistor. As a result, the 1/2VPP voltage necessary to realize a one-transistor type EEPROM can be generated by adding a simple constitution of circuit.</p>
申请公布号 JPS6478495(A) 申请公布日期 1989.03.23
申请号 JP19870235881 申请日期 1987.09.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 TERADA YASUSHI;NAKAYAMA TAKESHI;KOBAYASHI KAZUO
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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