Remover solution for photoresists

摘要

The remover solution of the invention comprises (A) from 35 to 80% by weight of an alcoholic solvent, such as ethylene glycol monoethyl ether, (B) from 10 to 40% by weight of an organic solvent which is a solvent based on a halogenated hydrocarbon, for example 1,2-dichlorobenzene and methylene chloride, an ethereal solvent, for example tetrahydrofuran, or an aromatic solvent, for example benzene and xylene, and (C) from 0.1 to 25% by weight of a quaternary ammonium compound, such as tetramethylammonium hydroxide and trimethylhydroxyethylammonium hydroxide. In contrast to conventional remover solutions, which can only swell the cured photoresist compositions, the remover solution according to the invention has the ability completely to dissolve a cured photoresist layer, and thus gives a fairly satisfactory result in equipment for removing structured photoresist layers during the production of semiconductor devices.