| 摘要 |
<p>An integrated logic circuit comprising bipolar transistors (16, 18) and junction field-effect transistors (12, 14). The junction field-effect transistors (12, 14) are arranged in the circuit to serve as switching elements, the gates being connected to the bases of the respective bipolar transistors (16, 18). The channels of the junction field-effect transistors are formed in the integrated structure design as ''pinch'' resistors defined by a P or N doped region of the same or similar type to that used to define the sub-emitter base resistance in the bipolar transistors (16, 18).</p> |
