MIS integrated circuit device and method of manufacturing the same.

摘要

The gate electrodes 8 of a P-channel MISFET and an N-channel MISFET are made of a P-type polycrystalline silicon film or a poly-cide film utilizing a P-type polycrystalline silicon film, and very shallow diffused layers 7 formed as As or Sb are provided in the channel portions of the MISFETs, thereby to control the threshold voltages of the MISFETs. Thus, in both the P-channel MISFET and the N-channel MISFET, punch-through and fluctuations in the threshold voltages are reduced and hence short channels of the MISFETs can be attained.