Semi-conductor photo-detecting device.

摘要

A semi-conductor photo-detecting device comprises a semi-conductor substrate (3) of one electro-conductive type, a doped region of opposite electro-conductive type formed within the semi-conductor substrate (3) to form a pn junction between the doped region and the substrate to constitute a photo-detecting element 7 and a passivation film (2) formed on the photo-detecting element (7). The passivation film (2) has a non-constant thickness so that intensity variation of light irradiated onto the photo-detecting element is reduced or eliminated.