| 摘要 |
PURPOSE:To prevent the formation of an inversion layer on the surface of a drain region by dividing a wiring material layer formed on the surface of an insulating layer of a gate region and electrically floating a section which overlaps on the drain region. CONSTITUTION:A P<+> type source region 2 and the drain region 3 are shaped to an N type semiconductor layer 1, a P type channel region 4 is buried between both regions, and the N type first gate region 5 is formed on the channel region. Here, the wiring material layer 10 is shaped on the surface of a gate oxide film 9 in a two divided form, and the section 10b overlapping on the drain region 3 is used under an electrically floated condition. According to such constitution, there happens no potential difference under the section overlapping on the drain region 3, and the surface of the drain region is not inverted. |
