| 摘要 |
PURPOSE:To obtain high accuracy and to decrease costs, by making a one conducting type semiconductor substrate a common collector, specifically connecting the connecting initial stages and final stages of at least two transistors, which are connected in a Darlington mode, thereby constituting a temperature detecting part. CONSTITUTION:For example, two N-P-N transistors 14 are connected in a Darlington mode. The base of the transistor 14 in the initial stage is connected to a common collector and a first electrode is formed. The emitter of the transistor 14 in the final stage is made to be a second electrode. Thus a temperature detecting part is constituted. A constant current circuit 8 is connected to the second electrode. Then a temperature sensor part A of the N-P-N transistor is formed by a collector electrode 23, a base electrode 17, and an emitter electrode 18. In this case, a P<+> diffused layer 20, which is to become a base region, can be manufactured together with a substrate region 27 of an N channel transistor B. An N<+> emitter region 22 can be manufactured together with a source 26 and the like of the transistor B. |
