发明名称 |
Charge injection circuit. |
摘要 |
<p>A charge injection circuit for injecting a charge to a signal processing circuit has a photo-voltaic element (21, 91) for generating a photocurrent (IP) when an infrared light is received, a field effect transistor (22, 92) used for injecting the charge to the signal processing circuit, and an impedance conversion circuit (25, 93) for feeding back an output of the field effect transistor to a substrate potential of the photo-voltaic element. The impedance conversion circuit has a gain (A) which is less than or equal to one.</p> |
申请公布号 |
EP0308169(A2) |
申请公布日期 |
1989.03.22 |
申请号 |
EP19880308435 |
申请日期 |
1988.09.13 |
申请人 |
FUJITSU LIMITED |
发明人 |
MIYAMOTO, YOSHIHIRO;TANIKAWA, KUNIHIRO;YICHIRO, ITO;KUBO, KAZUYA;KAJIHARA, NOBUYUKI;TOFUKU, ISAO |
分类号 |
H01L27/148;H01L31/103;H04N5/33 |
主分类号 |
H01L27/148 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|