| 摘要 |
PURPOSE:To improve the picture element, by converting a potential fluctuating component of an optical sensing section using photoelectric conversion into the amount of charge to be injected with good efficiency so as to avoid easily inconvenient phenomenon such as deterioration in a video signal at charge transfer or switching. CONSTITUTION:Lots of photo transistor arrays 3 being an optical sensing section and a switch transistor (TR) TR15 comprising a horizontal switch TR1 reading out a signal of the sensing section are provided on a semiconductor substrate corresponding to the optical sensing section. Further, the signal of the sensing sections arranged vertically is read out on a signal line 7 and the potential fluctuation of the signal line 7 is converted into the amount of charge injection from an injection source 8 at a charge injecting section comprising injecting gate electrode groups 10, 11, 13. Further, the deterioration in a video signal at charge transfer or an inconvenient phenomenon such as switching is avoided easily as a CCD shift register attaining the injection of charge in parallel from a horizontal selecting signal line 4 injecting each charge to improve the picture quality. |
