发明名称 |
Method of making devices having thin dielectric layers |
摘要 |
Certain devices require a high quality thin (<25 nanometer) dielectric layer formed on a deposited silicon layer. Applications include capacitor dielectrics in dynamic memories and linear devices. In another application, an electrically erasable programmable read only memory (EEPROM) uses an SiO2 layer between the write gate and the floating gate. The present technique oxidizes amorphous silicon under conditions that suppress grain growth to produce a higher quality oxide than that achieved with conventional furnace oxidation of polysilicon. Rapid thermal oxidation is one method of practicing the technique.
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申请公布号 |
US4814291(A) |
申请公布日期 |
1989.03.21 |
申请号 |
US19860833884 |
申请日期 |
1986.02.25 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES |
发明人 |
KIM, SEA-CHUNG;MAURY, ALVARO;STINEBAUGH, JR., WILLIAM H. |
分类号 |
H01L21/316;H01L21/28;H01L21/321;(IPC1-7):H01L21/70 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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