| 摘要 |
A photoconductor comprising an optically sensitive FET in which an abrupt heterojunction (18) is inserted in the channel (11) at a certain distance from the gate contact (16). This provides a potential barrier (17, FIG. 4) in the valence band that accumulates minority carriers (carriers of the lower mobility type) and controls their release. A gate bias resistor which is conventionally used in a receiver circuit including the FET is no longer required, instead the potential barrier height determines the time constant and a response comparable in length with an input optical pulse is achieved. This overcomes the problems of integrated manufacture, and slow response, associated with the large value of the bias resistor which is needed to reduce noise.
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