| 摘要 |
PURPOSE:To prevent any defective resolution of resist due to a step on the surface of a substrate from occurring by a method wherein the step for alignment in the photolithographic process performed after epitaxial formation is formed only on an alignment part (a) on the substrate. CONSTITUTION:An insulating film 2 is formed on the surface of a semiconductor substrate 1 by thermal oxidation; another insulating film 3 is formed on the film 2 by CVD process; and the other insulating film 4 capable of selectively etching the insulating film 3 is formed. Resist patterns 5 in specific shapes corresponding to the shapes of buried layers 7 are formed on the insulating film 4. Then, openings 4a, 4b are made using said patterns 5 as masks to form a resist pattern 6 for the opening 4a. The other opening 3a is made using the pattern 6 and the insulating film 4 as masks. Finally, after forming the layers 7, the insulating films 4, 3, 2 are etched away to form a step 8 for alignment on the surface of the exposed substrate 1. |
