发明名称 ELECTRON BEAM LITHOGRAPHY
摘要 PURPOSE:To put together pattern written by a variable molding beam and a pattern written be reduction transcription with good accuracy, by measuring the actual positions on a target in the case where a variable molding beam is passed on a target and in the case where a reduction image is passed up to the target so as to perform writing basing on the measured value. CONSTITUTION:A stage is moved near the coordinates of a microparticle 41 measured by a variable molding beam 22B by controlling a coil so that a reduction beam image 22A may come on a target 17 so as to scan a reduction beam image in its neighborhood by using a scanning deflection electrode. The relative positions (x direction) of a beam side of the variable molding beam 22B and a specific beam side of the reduction image 22A can be calculated from a difference between a beam side in the case where the microparticle 41 is scanned in the direction of an arrow 2 with the variable molding beam 22B and a position when the reduction image 22A is scanned in the direction of an arrow 6 while placing the microparticle in the position of the point 5. Quite equally, the positions of the variable molding beam and the reduction beam image 22A in the direction (y) of the arrows 3 and 8 can be calculated.
申请公布号 JPS6474722(A) 申请公布日期 1989.03.20
申请号 JP19870231024 申请日期 1987.09.17
申请人 TOSHIBA CORP 发明人 NAKASUJI MAMORU
分类号 H01L21/027;G03F1/20;G03F1/68;G03F7/20;H01L21/30 主分类号 H01L21/027
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