| 摘要 |
PURPOSE:To improve a bonding strength by a method wherein a nickel layer is made to be employed as a metallic face to which a heat sink is to be bonded. CONSTITUTION:A metallic plate 3 is so brazed as to cover a through-hole provided to the center of a ceramic substrate 1 of a semiconductor device provided with a heat sink, a semiconductor element is fixed to the recessed part of the rear of the plate 3, and a heat sink is bonded to the top surface of the plate 3. The metallic plate 3 provided with a primary nickel layer 11 on it is brazed to a first nickel layer 10, which is formed on a tungsten metallized layer 9 built on the substrate 1, using a silver/copper brazing material 12, and a second nickel layer 13 and a gold plated layer are formed through electroplating, then the gold plated layer is removed and a heat sink 7 is made to be directly bonded to the nickel layer 13 using a resin 8. In this process, a adhesive seal or a film material is applied onto the part of the nickel layer 13 to which the heat sink 7 is made to be bonded and then a gold plating is performed, then a required part of the nickel layer 13 is made to be exposed. Or a gold plating is performed onto the whole face, and then gold plated on the required part is removed through etching. |
