| 摘要 |
PURPOSE:To improve the accuracy of the sensitivity distribution of insensitive areas on the photodetector to incident light by distributing the plural insensitive areas which are insensitive to light and have a specific density distribution on the photosensitive surface of the photodetector. CONSTITUTION:An N-type semiconductor substrate is coated with a resist material and its surface is covered with a mask having holes at positions corresponding to the insensitive areas 22. The insensitive areas 22 are distributed more on the ceiling side. The density distribution is realized by varying the number of circular holes per unit area so that the distribution becomes rougher almost from the center of the incidence intensity distribution to the periphery corresponding to the intensity distribution of the incident light. Holes are bored in the resist materials by photoetching, a P-type diffusion layer is formed in an atmosphere of P-type impurities, and the resist material is removed. Areas except the P-type diffusion layer are insensitive areas 22. |
