| 摘要 |
<p>PURPOSE:To reduce the step of a gate electrode and to prevent a linear defect and a display irregularity from being generated by etching the projection part of an insulating film formed on an amorphous silicon layer by using a metallic film as a mask, and forming the gate electrode on a flattened insulating film. CONSTITUTION:A source electrode 3 and a drain electrode 2 are formed on a glass substrate 1, the amorphous silicon layer 4 is so formed on the source electrode 3 and drain electrode 2 as to connect the source electrode and drain electrode 2, and an insulating film 5 and the metallic film 6 are formed in order over the entire surface including the amorphous silicon layer 4. Then the projection-shaped metallic film 6 formed on the amorphous silicon layer 4 is removed, the remaining metallic film 6 is used as the mask to etch and flatten the insulating film 5, and the gate electrode 7 is formed on the flattened insulating film 5. Consequently, the step of the gate electrode 7 is made small and when this is used for liquid crystal display, neither of the linear defect and display irregularity is caused.</p> |
