| 摘要 |
PURPOSE:To realize a reduction in cost per unit power generation by a method wherein a hydrogen content in the light incidence side of a window layer containing silicon and hydrogen is made high as compared with the photoactive layer side and the conductivity on the photactive layer side is made higher than that on the light incidence side. CONSTITUTION:A window layer 2p has a two-layer structure of different compositions of a first layer 2p1 on the light incidence side and a second window layer 2p2 on the photactive layer side; the first window layer 2p1 on the light incidence side contains much hydrogen as compared with the second window layer 2p2 on the photoactive layer side; although about 15 atomic % of hydrogen is contained normally in a film, the first window layer 2p1 contains about 20 atomic % or more of hydrogen due to its film composition. On the other hand, the conductivity of the second window layer 2p2 coming into dierct contact with the photactive layer 2i is higher than that of the first window layer 1p1. The second window layer 2p2 has a high conductivity of 1X10<2>OMEGA<-1>cm<-1> or more. This high conductivity is achieved if muc-SiC:H doped with a p-type- determining impurity is used as the second window layer 2p2. |
