| 摘要 |
PURPOSE:To obtain a photoelectric conversion device which has no possibility of breakdown of layers for forming a photoelectric conversion element and a dense protective film for completely preventing a metal electrode layer from corroding by forming a protective film by laminating a denser second insulating layer on a first insulating layer formed by a method which does not damage the layers. CONSTITUTION:A photoelectric converter element D1 having at least photoelectric conversion layer 2 and electrode layers 3, 4 is formed on a substrate 1, and a protective film 5 is so formed as to cover the layers of the element D1. The film 5 of such a photoelectric conversion device by laminating a second insulating layer 5b which can prevent more dense electrode layers 3, 4 from externally corroding on a first insulating layer 5a formed by a method which does not damage the layers. For example, a plurality of photoelectric converter elements D1 are formed on the insulating substrate 1, and an SiO2 film having approx. 1000Angstrom of thickness as the first insulating layer 5a is formed by a vacuum depositing method by heating with an electron beam thereon. Further, an SiO2 film having approx. 2000Angstrom of thickness as a second insulating layer 5b is laminated by a magnetron sputtering method thereon. |
