| 摘要 |
<p>PURPOSE:To simplify a manufacturing process by a method wherein a recessed part of a gate bus line and a drain bus line is exposed to light partially and, after that, a reversal baking operation is executed so that insulation between the bus lines cannot be spoiled. CONSTITUTION:A gate bus line is formed on a transparent insulating substrate 1 according to a prescribed pattern. Then, an SiN layer 3, an a-Si layer 4 and an SiO2 layer 5 are formed consecutively. Then, an image reversal photoresist film 6 is formed; an exposure operation is executed by using UV rays 8 from the rear of the glass substrate 1 by making use of the gate bus line 2 as a mask. Accordingly, a united insoluble part is formed by using a part 7 to be exposed and an unexposed part 7' which has been self-aligned with the gate bus line 2. Then, an n<+> a-Si layer 9 and a Ti layer 10 of a conductive electrode layer are formed. Then, a resist film 11 for formation of a source electrode and a drain electrode is formed. Then, an ITO layer 11 of a transparent conductive film for formation of a pixel electrode and the drain electrode is formed and patterned to form the pixel electrode E and the drain electrode DB; a thin-film transistor matrix is completed.</p> |
