| 摘要 |
PURPOSE:To shorten the delay time of wirings by so covering at least an electrode of an active element with an insulating film as to pass wirings of first layer on an unused active element in a semiconductor integrated circuit device having a gate array structure. CONSTITUTION:In a semiconductor integrated circuit device, the whole surface of the unused section of many transistor regions 1 on a semiconductor substrate 10 is covered with a low dielectric constant insulating film 3, wirings 4 of a first layer for connecting a first transistor region 1a to a third transistor region 1b can be linearly disposed on a transistor region 1c, and the region 1c becomes a wiring region substantially equal to the original wiring region 5. Accordingly, the electrode leads 2 of the regions 1a, 1b can be connected at the shortest distance by the wirings 4 of the first layer. |
