| 摘要 |
PURPOSE: To grow a high-quality oxide on an ion-implanted polysilicon surface by forming an Si film on a substrate, implanting ions therein, activating them to convert the Si film into a polysilicon, growing an insulation layer thereon, implanting second ions through it, removing the insulation layer and growing a second insulation layer. CONSTITUTION: On a substrate 10 an Si film 12 is formed through e.g. an oxide layer 11 and doped with a first dopant, e.g. P which is activated to convert the Si film 12 into a polysilicon 14, a first insulation layer 13 is grown on the polysilicon film 14, this frequency 14 is doped with a second dopant e.g. Ar through the first layer 13, the first layer 13 is removed, and a second insulation layer 15 is grown on the polysilicon film 14 so as to have uniform physical and electrical properties.
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