| 摘要 |
PURPOSE:To make it possible to increase a capacitance value of a capacitor by providing the following: a first electrode; a dielectric film covering the surface and the under surface of the first electrode; a second electrode formed to face the surface; and the under surface of the first electrode. CONSTITUTION:A field oxide film 2 is formed on a silicon substrate 2; a window is opened in a part of a diffusion layer 1a formed on the silicon substrate 1; a polysilicon film 3 to be used as a gate electrode of a transfer gate transistor and an insulating film 4 are formed. Then, a polysilicon film is formed on the whole surface of the insulating film 4 and is patterned to form an electrode A 5. Then, a silicon nitride film is formed on the surface of the electrode A 5 and is patterned to form an insulating film A 6. In succession, a polysilicon film is formed on the surface of the insulating film A 6 and is patterned to form an electrode B 7. A silicon nitride film is formed so as to cover this electrode B 7 completely; while the silicon nitride film on the side of the electrode B 7 is left, the silicon nitride film on the surface of the electrode A 5 is removed completely. Lastly, a polysilicon film is formed on the surface of an insulating film B 8 and the electrode B 7, and is patterned to form an electrode C 9. |
