| 摘要 |
PURPOSE:To obtain the title high-purity jig which is not bent at a high temp. by mixing the raw materials such as SiC powder, graphite powder, a binder, etc., forming the mixture, calcining the formed product, purifying the material under specified conditions, reaction-sintering the material, and then again purifying the material under the same conditions as the preceding purification. CONSTITUTION:alpha-SiC powder of beta-SiC powder, graphite powder or carbon black, and a binder (e.g., phenolic resin) are mixed, and the mixture is formed. The obtained formed product is then calcined, and purified while passing gaseous hydrogen chloride at 1,000-1,200 deg.C and at a flow velocity of 0.1-0.5cm/sec. The material is then reaction-sintered, and again purified under the same conditions as the preceding purification to obtain the silicon carbide jig for a semiconductor diffusion furnace. The jig 3 is arranged in a process tube 2 a silicon wafer 4 is placed on the jig 3 and heat-treated, and the heat treatment can be carried out without the contamination of the wafer 4 with the jig 3. |
