| 摘要 |
PURPOSE:To obtain an optical semiconductor element simple in structure and easy to manufacture by providing a superconductor film between the electrode of a semiconductor element for light emission and an external conductor, and introducing a signal light to the film to control the quantity of light emitted by the element. CONSTITUTION:A superconductor film 20 is provided between the electrode 18 of a light emitting semiconductor element and an external lead, a signal light is introduced to the film 20 to control the quantity of the emitting light of the element. For example, after a P-type InP buffer layer 12, an InGaAsP active layer 13 and an N-type InP layer 14 are crystalline grown on a P-type InP substrate 11, a stripelike reverse mesa structure is formed by etching. Then, the side face is buried with an N-type InP block layer 15 and a P-type InP layer 16 by twice crystal growths, thereby manufacturing a semiconductor laser. Thereafter, an insulating film 17 is formed on the top, the film 17 of the part of the N-type side of the laser is removed, and an N-type electrode 18 is formed. Further, the part of the electrode 18 is removed, and the superconductor film 20 is adhered. Further, a P-type electrode 19 is formed on the lower part of the laser. |
